the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for in accuracies or ommisions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user?s own risk. prices and specifications a re subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microdevices does not authorize or warrant any sir enza microdevices product for use in life-support devices and/or systems. copyright 2003 sirenza microdevices, inc. all worldwide rights reserved. 303 south technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 1 eds-102714 rev. d preliminary data sheet sirenza microdevices? sft- 0100 is a high performance heterojunction bipolar transis tor transimpedance amplifier designed for 10/12.5 gb/s sonet/sdh applications. the SFT-0100 uses high f t indium gallium phosphide device technology that delivers high transimpedance, large dynamic range, and a typical bandwidth greater than 10.5ghz. performance is enhanced through the use of a patented circuit topology that reduces duty cycle distortion under high photocurrent conditions and allows high transimped- ance with low dc power to be realized. the SFT-0100 is supplied in bare die form a nd includes a current monitor feature that can be used for fiber alignment or loss of sig- nal (los) detection. functional block diagram SFT-0100 transimpedance amplifier product features applications ? low noise ingap hbt technology ? differential transimpedance ~ 2200 ? ? +5.0v power supply ? high sensitivity < ? adjustable dynamic range ? low duty-cycle distortion ? differential outputs ? photo current monitor ? patented dcdr circuit ? backside vias eliminate the need for ground wirebonds 10pa hz ? ? optical receiver modules ? xfp, xenpak, xpak, x2 modules ? 9.953 gb/s sonet oc-192/sdh stm-64 ? 10.3 gb/s ethernet applications ? 10.7 gb/s itu g.709 ? 12.5 gb/s sonet with fec product description tia amp1 dcdr* imon vcc vpin rx c filter outn outp c dcdr c ext transimpedance amplifier photo-detector *patented chip size: 1000um x 1000um x 100um
303 south technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 2 eds-102714 rev. d preliminary data sheet SFT-0100 transimpedance amplifier absolute maximum ratings parameters value unit supply current (i cc )60ma device voltage (v cc )6.0v maximum dc input current 5.0 ma operating temperature (t op ) 0 to +85 oc storage temperature range -40 to +150 oc operating junction temperature (t j )+150 oc product specifications ? electrical parameters unit min. typ. max. differential transimpedance assume c d = 0.26pf, r d = 15 ? , l int = 1.0nh ? 2000 2200 2400 transimpedance bandwidth (3db) assume c d = 0.26pf, r d = 15 ? , l int = 1.0nh ghz 9 10.5 gain single-ended, 50 ? in/out db 26 27.5 30 gain ripple single-ended, 50 ? in/out db 1 s21 3db bandwidth single-ended, 50 ? in/out ghz 8 9.5 group delay deviation single-ended, 50 ? in/out, 30khz - f c ps 30 optical sensitivity assuming 0.9a/w responsivity, measured at 10 -12 ber with a 2 31 -1 prbs @ 10gb/s dbm -18.5 optical overload assuming 0.9a/w responsivity, measured at 10 -12 ber with a 2 31 -1 prbs @ 10gb/s ma p-p 2.5 input equivalent noise current density f = 7ghz 9 maximum output voltage swing single-ended, 50 ? in/out mv p-p 450 input dc voltage v1.45 output dc voltage 50 ? termination to vcc v 4.4 output return loss single-ended, 50 ? in/out db -10 supply voltage v 4.75 5.0 5.25 supply current vcc=5.0v ma 47 52 55 power dissipation mw 260 input coupling ac or dc dc output type se or df df output coupling ac or dc ac or dc photodiode current monitor yes dynamic range adjust see dcdr description yes pa hz ? r=15 ? c=0.26 pf l tia model used for transimpedance calculation
303 south technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 3 eds-102714 rev. d preliminary data sheet SFT-0100 transimpedance amplifier typical electrical performance optical measurement performance 0 2 4 6 8 101214161820 frequency (ghz) -30 -25 -20 -15 -10 -5 0 s11 (db) s11 vs. frequency 02468101214161820 frequency (ghz) 0 5 10 15 20 25 30 35 s21 (db) s21 vs. frequency transimpedance gain cpd=0.26pf, rd=15 ? , lwb=1nh 45 47 49 51 53 55 57 59 61 63 65 02468101214 frequency (ghz) transimpedance (db ohms) 0 2 4 6 8 101214161820 frequency (ghz) -30 -25 -20 -15 -10 -5 0 s22 (db) s22 vs. frequency SFT-0100 optical sensitivity 1.e-12 1.e-11 1.e-10 1.e-09 1.e-08 1.e-07 1.e-06 -21 -20.75 -20.5 -20.25 -20 -19.75 -19.5 -19.25 -19 -18.75 -18.5 -18.25 -18 optical power, (dbm) ber note: all electrical measurements performed using die probe station. 9.953gb/s,-18dbm, prbs31 optical measurements courtesy of vsk photonics
303 south technology court phone: (800) smi-mmic http://www.sirenza.com broomfield, co 80021 4 eds-102714 rev. d preliminary data sheet SFT-0100 transimpedance amplifier dcdr imon gnd outp gnd outn gnd gnd gnd in gnd gnd vcc cext zo = 50 ? zo = 50 ? zo = 50 ? in outn outp 100pf 1000pf 0.1uf 100pf 1000pf 0.1uf imon vcc (5v) vcc (5v) 100pf 1000pf 0.1uf 100pf 1000pf 0.1uf r dcdr (1k-50k ? , optional) application circuit description of external connections and how they operate imon: when tied to the supply voltage through an amme- ter, the current through the ammeter ?imon? reflects the average photo diode current. the imon current will be approximately the value of the average photo diode cur- rent and will be directly proportional to this quantity. imon can be used for loss of signal detection or photodiode/fiber alignment in manufacturing. a third function this monitor can provide is the manual adjustment of the dcdr thresh- old. with no input photocurrent applied to the tia, the imon will give a finite quiescent current (ua). the finite cur- rent indicates that the automatic circuit has already started to turn on. by employing a shunt resistor (1k-50k) on the c dcdr port to ground, this threshold can be reduced (cur- rent can be reduced to a few ua) setting the automatic cir- cuit for maximum sensitivity and dynamic range. dcdr (duty cycle distortion reduction): this patented feature compensates for the duty cycle distortion as a result of high input current seen by the amplifier. as the optical input power and induced photo current is increased, an automatic circuit is invoked to prevent dis- torted operation in the transistors of the tia. the threshold input current where the circui t turns on can be adjusted by employing a shunt resistor to ground at the dcdr pin. the value of the shunt resistor can be set between 1k and 50k. the lower the value, the higher the input current threshold in which the circuit turns on. in order to optimize for maximum sensitivity and dynamic range, the imon cur- rent can be monitored while tuning this shunt resistor. optimum sensitivity and dynamic range can be obtained by tuning the resistor value until only a few ua of imon cur- rent is observed when there is no optical input power applied. c dcdr : an off chip capacitor is required in order to inte- grate and produce the automatic circuit control voltage. c ext : an off chip capacitor sets the lower frequency of operation for the amplifier. for 30khz operation and below, a 0.1uf capacitor is required. wirebond length is critical and should be minimized. c vcc : an off chip bypass capacitor is required. wirebond length is critical and should be minimized. ground wirebonds: the SFT-0100 has backside vias and backside metal. the bottom of the die must be electri- cally connected to ground us ing eutectic or conductive epoxy die attach methods. it is not recommended to attach any wirebonds to the top gnd pads.
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